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DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
R DS(on)
I D
T A = 25°C
?
?
N-Channel MOSFET
Low On-Resistance:
? 3.0 Ω @ 4.5V
20V
3.0 Ω @ V GS = 4.5V
6.0 Ω @ V GS = 1.8V
240mA
170mA
?
?
?
4.0 Ω @ 2.5V
6.0 Ω @ 1.8V
10 Ω @ 1.5V
?
Very Low Gate Threshold Voltage, 1.05V max
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
? DC-DC Converters
? Power management functions
?
?
?
?
?
?
?
?
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package, 0.4mm Maximum Package
Height
ESD Protected Gate
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
?
?
?
?
?
?
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
Body
Diode
Gate
S
Gate
D
Protection
Diode
Source
G
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN26D0UFB4-7
DMN26D0UFB4-7B
1. No purposefully added lead.
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN26D0UFB4-7
DMN26D0UFB4-7B
M1
Top View
Dot Denotes Drain Side
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
M1
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
M1 = Product Type Marking Code
March 2012
? Diodes Incorporated
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